High coupling piezoelectric thin films of Pb„Zr,Ti...O3-based ternary perovskite compounds for GHz-range film bulk acoustic resonators

نویسندگان

  • N. Yamauchi
  • T. Shirai
  • T. Yoshihara
  • Y. Hayasaki
  • T. Ueda
  • T. Matsushima
  • K. Wasa
  • I. Kanno
  • H. Kotera
چکیده

We have deposited nearly stress-free single-crystal thin films of 001 Pb Mn,Nb O3–Pb Zr,Ti O3 PMnN-PZT on 001 MgO substrates by rf-magnetron sputtering using a quenching process after the film growth. It is found that single c-domain/single-crystal thin films of PMnN-PZT containing 5%–10% PMnN show a strong hard ferroelectric response with 2Ec 400 kV /cm and Ps 70 C /cm2. GHz-range film bulk acoustic resonators incorporating PMnN-PZT thin films have been fabricated with microelectromechanical system technology. The maximum electromechanical coupling coefficient kt and mechanical quality factor Qm were 0.7 and 185 in the 4 GHz range, respectively. © 2009 American Institute of Physics. DOI: 10.1063/1.3126060

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Sol–gel derived Pb(Zr,Ti)O3 thin films: Residual stress and electrical properties

Pb(Zr,Ti)O3 compositions are under investigation for applications that include integrated capacitors, piezoelectric sensors, and actuators. Sol–gel synthesis and spin coating are popular routes to the formation of high quality, dense, crack free, insulating films. However, the electrical properties of the films are often different than those measured for bulk specimens of the same composition. ...

متن کامل

Pb(Zr,Ti)O3 Thin Films on Zirconium Membranes for Micromechanical Applications

An efficient, electrically conductive, chemical barrier for the integration of piezoelectric Pb(Zr,Ti)O3 (PZT) films on reactive metal substrates has been developed, opening new possibilities for PZT integration on micromechanical and semiconductor devices, Very reactive zirconium films have been taken in order to test the quality of the specially designed RuO2/Cr buffer under the condition of ...

متن کامل

Zinc Oxide Piezoelectric Thin Films for Bulk Acoustic Wave Resonators

・ Abstract – Characteristics of Zinc oxide (ZnO) piezoelectric thin films have been investigated for thin film bulk acoustic wave (BAW) resonators with relationship to bottom electrodes. A Metal/ZnO/Metal/SiO2 membrane structure, which has secondary harmonics, was adopted for the BAW resonators. The ZnO thin films, showed clear c-axis orientation, were made by rf sputtering on bottom electrodes...

متن کامل

Processing and Characterization of Piezoelectric Materials into MicroElectroMechanical Systems

The Pb(Zr, Ti)O3 (PZT) based micro electro mechanical systems are presented. Piezoelectric effect, basic piezoelectric equations are explained. Lost silicon mold process for PZT microstructures, PZT thin film deposition, and PZT based piezoelectric micromachined switch device are discussed.

متن کامل

Cluster Calculations of Nuclear Magnetic Resonance Chemical Shielding in Piezoelectric Solid Alloys

High performance piezoelectric materials are expected to play an important role in the next generation of sensors and actuators, used for example, in aircraft for active vibration and noise control. Piezoelectric materials can transform mechanical to electrical energy (and vice versa). The goal of this study is to understand how the local atomic structure is related to piezoelectric properties....

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2009